List of topics

The GADEST 2013 conference aimed to cover a broad range of topics, from theoretical analysis of defect problems towards practical engineering solutions. The purpose of the conference was to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology. Fundamental aspects and technological problems associated with defects in devices and materials ranging from micro- and nano-electronics through to photovoltaics were at the heart of the conference. There were a large number of contributions on silicon, but we also encouraged those working on other semiconductors to participate.

Topics addressed by the conference included:

1. Materials
1.1 Advanced semiconductor materials (strained Si, SOI, SiC, Ge)
1.2 Strain-engineered semiconductors
1.3 III-V semiconductors (e.g. GaN, GaAs)
1.4 Crystalline silicon for solar cells (including single crystal, multicrystalline, ribbons, thin films on substrates)
1.5 Large diameter crystal growth
1.6 Semiconductor nanocrystals, nanowires and quantum dots
1.7 Modelling and simulation of material growth
1.8 Advanced characterization of semiconductor materials (structural and electrical)

2. Defects in silicon materials for microelectronics and photovoltaics
2.1 Light elements (e.g. hydrogen, oxygen, carbon, nitrogen, fluorine)
2.2 Vacancy and interstitial behaviour during crystal growth and wafer processing
2.3 Transition metals
2.4 Extended defects (e.g. dislocations, precipitates, grain boundaries)
2.5 Defect interactions
2.6 Gettering and bulk passivation
2.7 Surface passivation and defects at interfaces
2.8 Modelling and simulation of defects

3. Defects in semiconductors other than silicon
3.1 Point-defects
3.2 Extended defects (e.g. dislocations, precipitates, grain boundaries)
3.3 Defects at surfaces and interfaces
3.4 Gettering and passivation
3.5 Modelling and simulation of defects

4. Devices
4.1 Next generation micro- and nano-electronics
4.2 Advanced solar cells
4.3 Power electronics
4.4 Silicon-based photonics and photonic crystals
4.5 Spin properties and spintronics
4.6 Co-integration of materials for devices (including graphene, Ge, III-Vs and organics)
4.7 Silicon-based heterostructures

This list of topics was not intended to be exhaustive and we were happy to consider abstracts submitted in other areas related to the broad GADEST theme.