Invited speakers

The invited speakers at the conference were:

Koji Araki (GlobalWafers Japan Co., Ltd., Japan)
Effect of hydrogen for the preservation of reconstructed surfaces

Tzanimir Arguirov (BTU Cottbus, Germany)
Light emission from bulk germanium and germanium on silicon structures

Hartmut Bracht (Universität Münster, Germany)
Properties of point defects in silicon: new results after a long-time debate

Alexander Ezhevskii (Lobachevsky State University of Nizhni Novgorod, Russia)
Monoisotopic 28Si and 29Si in spin resonance spectroscopy of electrons localized on donors and conduction electrons

Peter Fath (RCT Solutions, Germany)
Si-based photovoltaics materials (mc-, mono-like- and mono-Si) and technology

Erwin Kessels (Eindhoven University of Technology, Netherlands)
Physical mechanisms of surface passivation of silicon wafers by ultrathin films of Al2O3

Jasmin Hofstetter (Massachusetts Institute of Technology, USA)
Iron management in multicrystalline silicon through predictive simulation: point defects, precipitates, and structural defect interactions

Daniel Macdonald (Australian National University, Australia)
External and internal gettering of interstitial iron in silicon for solar cells

Vladimir Markevich (University of Manchester, UK)
The trivacancy and trivacancy-oxygen family of defects in silicon

Jurgen Michel (Massachusetts Institute of Technology, USA)
High n-type doping in Ge for optical gain and lasing

Salvatore Mirabella (CNR IMM, Catania, Italy)
Synthesis and light absorption in Si or Ge nanoclusters for photovoltaics application

Bernhard Mitchell (University of New South Wales, Australia)
Photoluminescence imaging of silicon bricks

Hans Joachim Möller (Technische Universität Bergakademie Freiberg, Germany)
Mechanical properties of silicon wafers for photovoltaic applications

Rachel Oliver (University of Cambridge, UK)
Defects and their relation to unintentional doping in GaN

Jan Schmidt (Institut für Solarenergieforschung in Hameln/Emmerthal, Germany)
P-type vs n-type silicon: which will be the PV material of the future?

Martin Schubert (Fraunhofer ISE, Germany)
Efficiency-limiting recombination in multicrystalline silicon solar cells

Sergei Simdyankin (Newcastle University, UK)
Extended point defects in crystalline materials: Ge and Si

Ron Sinton (Sinton Instruments, USA)
Overview and latest developments in photoconductance lifetime measurements in silicon

Michael Stavola (Lehigh University, USA)
Light impurities and their reactions in Si photovoltaic materials from IR spectroscopy

Mike Thewalt (Simon Fraser University, Canada)
Transition metal-related photoluminescence in silicon

Vladimir Voronkov (MEMC Electronic Materials, Italy)
Light-induced boron-oxygen recombination centres in silicon: understanding their formation and elimination

Jörg Weber (Technische Universität Dresden, Germany)
New results on the electrical activity of transition metal impurities in silicon

Angus Wilkinson (University of Oxford, UK)
Lattice strain, rotation and defect assessment in GaN and other semiconductors using electron backscatter diffraction